B026290 - MICRO AND NANO ELECTRONIC DEVICES

italian, english if requried by the students

Operation principle of microelectronic devices
The Bipola Junction Transistor
The MOS transistor, scaling and nanoscale devices
High mobility transistor ( HEMT )
Heterojunction Bipolar Transistor at ( HBT )
The electronic transport in electronic devices
The noise in electronic devices
Applications for microelectronics
Elements of nanoelectronic devices

G. Ghione, Dispositivi per la Microelettronica, McGrawHill 1998
Y. Taur,T Ning, Fundamentals of Modern VLSI Devices, SECOND EDITION,
Cambridge University Press

The in-depth knowledge of the modern devices operation principles suitable for microelectronics and their modelling.
Understanding of the phenomena involved in higher-order electron transport and non-ideal behavior in the devices.
Introduction to technology of emerging devices for micro- and nanoelectronics .

The basic elements of electronics and solid state physics

Frontal lessons distinguishing the themes of racing and numerical exercises. Practical demonstrations in the laboratory

Learn to describe the operating principles of modern semiconductor devices for micro and nanoelectronics electronics.
Know how to apply behavioral patterns
  of semiconductor devices with cirut electrons.
Know distingures and describe the top-level phenomena involved in electronic transport.
Know how to describe non-ideal behavior in semiconductor devices for micro and nanoelectronics.
Know how to apply the emerging technologies of micro and nanoelectronics devices.

1. Elements of the theory of electronic devices
1.1. Electrostatic-Junctions Semiconductor and Semiconductor
Metal-Semiconductor
1.2. Theory of the P-N junction and the junction Me-S
1.3. Electronic properties of semiconductor heterostructures,
Compound semiconductors
1.4. Eterostruttore adapted and pseudomorfiche
1.5. Energy levels in Quantum Well
1.6. Confinement in Triangular Quantum Well
2. The transistor Bipolar - BJT
2.1. calls on the principle of operation
2.2. calculation of the current shipping
2.3. Characteristic values ​​of static and dynamic
3. The MOS transistor
3.1. band structure and operating principle
3.2. inversion of the channel and the calculation of the threshold voltage
3.3. equivalent circuit
3.4 Scaling MOSFET
3.5 Phenomena of higher order for short-channel MOSFETs
4. The noise in electronic devices
4.1. mechanisms at the basis of the noise in electronic devices
4.2. phase jitter
5. High Mobility Transistors (HEMTs)
5.1. Operating principle: physical analysis
5.2. transistors AlGaAs \ GaAs, AlGaAs \ InGaAs \ GaAs, InAlAs \ InGaAs \ InP
5.3. Equivalent circuit
5.4. Modulation efficiency
5.5. Design criteria for a HEMT
5.6. Numerical models of electron transport and the control of a 2DEG
Heterojunction Bipolar Transistor to 6. (HBT)
6.1. Principle of operation and characteristics
6.2. It structures \ SiGe, AlGaAs \ GaAs
6.3. Model Ebers-Moll and Gummel-Poon
7. Elements of devices for nanoelectronics
7.1. Resonant tunneling superlattices, inter- and intra-band
7.2. confinement in electronic structures 1D and 0D; FET singoloelettrone
7.3. Elements of molecular electronics: TF-MOS and OLED cells solariorganiche
7.4 Elements of Spintronics
8. CAD sessions for the analsys of circuit topologies and application of modern electron devices

This teaching contributes to the realization of the UN objectives of the 2030 Agenda for Sustainable Development